gate turn-off thyristor ATG777 repetitive voltage up to 4500 v mean on-state current 890 a controllable on-state current 2400 a final specification surge on-state current 17 ka nov 06 - issue : 03 symbol characteristic conditions tj value unit c min typ max blocking v drm repetitive peak off-state voltage 4500 v v rrm repetitive peak reverse voltage 16 v i drm repetitive peak off-state current v d =vdrm r gk <2 ohm 125 100 ma i rrm repetitive peak reverse current v r =vrrm 10 ma (dv/dt) crit critical rate of rise of off-state volt age, min linear ramp up to 50% vdrm, shorted g-k 1000 v/us conducting i t (av) mean on-state current 180 sin, 50 hz,th=75c, doubl e side cooled 890 a i tsm surge on-state current sine wave, 10 ms, no reverse voltage 125 17 ka i2 t i2 t for fusing coordination 10ms, no reverse vo ltage 1445 a 2 s10 3 v on-state voltage on-state current = 2000 a 25 2,73 v poseico spa power semiconductors italian corporation poseico poseico spa via pillea 42-44, 16153 genova - italy tel. +39 010 8599400 - fax +39 010 8682006 sales office: tel. +39 010 8599400 - fax +39 010 8681180 v t on-state voltage on-state current = 2000 a 25 2,73 v v t(to) threshold voltage 125 1,51 v r t on-state slope resistance 0,51 mohm switching on t gt gate controlled turn on time i t = 2500a; di/dt = 350a/us 10 us t d delay time i gm > 50a; di gr /dt = 25a/us 125 3 us e on turn-on switching energy v d = 2500v, c s = 4uf; r s = 5 ohm 2,8 j (di/dt) crit critical rate of rise of on-state curr ent i t = 2400a, i gm = 50a, di gr /dt = 25a/us 125 400 a/us switching off i tcm controllable peak on-state current 2400 a t gq gate controlled turn-off time i tc = i tcm , v dm =3500v 30 us t s storage time c s = 4uf, di gr /dt = 40 a/us 125 28 us e off turn-off switching energy ls = 0.28uh 8,5 j i rg turn-off reverse gate current 650 a v dsp spike voltage 850 v triggering v gt gate trigger voltage v d =24v 25 1,5 v i gt gate trigger current 25 3,0 a v rgm peak reverse gate voltage 25 16 v i rgm peak reverse leakage gate current v rg = v rgm 125 10 ma dissipation r th(j-h) thermal resistance junction to heatsink d.c. double side cooled 16 c/kw t vj virtual junction temperature 125 c t stg storage temperature -40 150 c mounting w weight 1300 g f mounting force 31 / 35 kn ordering information : ATG777 s 45 standard specification vdrm/100 standard specification vdrm/100
ATG777 gate turn-off thyristor final specification nov 06 - issue : 03 0 500 1000 1500 2000 2500 3000 0,6 1,6 2,6 3,6 on-state current [a] on - state voltage [v] on-state characteristic tj = 125 c 0 2 4 6 8 10 12 14 16 18 1 10 100 itsm [ka] n cycles surge characteristic tj = 125 c poseico spa power semiconductors italian corporation poseico distributed by on - state voltage [v] 0 2 4 6 8 10 12 14 16 18 20 0,001 0,01 0,1 1 10 zth j-h [c/kw] t[s] transient thermal impedance double side cooled n cycles all the characteristics given in this data sheet are guarant eed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. in the interest of product improvement poseico spa reserves the right to change any data given in this data sheet at any time without previous notice. if not stated otherwise the maximum value of ratings (simbols over shaded if not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.
|
